PS2801A-1,PS2801A-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
160
120
80
100
80
60
40
20
0
PS2801A-4
PS2801A-1
PS2801A-4
0.8 mW/˚C
PS2801A-1
1.2 mW/˚C
0.6 mW/˚C
40
0
0
25
50
75
100
( ˚C)
125
0
25
50
75
100
(˚C)
125
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
30
25
20
15
10
5
I = 10 mA
F
T
A
= +100˚C
+60˚C
+25˚C
10
5
0˚C
–25˚C
–55˚C
5 mA
1
0.5
2 mA
1 mA
0.1
0.05
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10
10 000
IF = 10 mA
5 mA
2 mA
1 000
100
10
V
CE = 24 V
V
CE = 70 V
1 mA
1
0.1
1
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE(sat) (V)
Ambient Temperature T
A
(˚C)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10398EJ01V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
