RENESAS LSIs
M5M5256DFP,VP-55LL,-70LL,-70LLI,
-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply voltage
Vcc
V
I
V
O
P
d
T
opr
T
stg
Input voltage
Output voltage
Power dissipation
Operating temperature
Storage temperature
( Vcc=5V±10%, unless otherwise noted)
Conditions
With respect to GND
Ta=25°C
-LL,-XL
-LLI
Ratings
-0.3
*
~7.0
-0.3
*
~Vcc+0.3
(Max 7.0)
Unit
V
V
V
mW
°C
°C
0~Vcc
700
0~70
-40~85
-65~150
_
* -3.0V in case of AC ( Pulse width < 30ns )
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
V
IL
V
OH1
V
OH2
V
OL
I
I
I
O
Icc
1
Parameter
High-level input voltage
Low-level input voltage
Test conditions
Limits
Min
2.2
-0.3*
2.4
Vcc
-0.5
Typ
Max
Vcc
+0.3
Unit
V
V
V
V
0.8
High-level output voltage 1 I
OH
=-1mA
High-level output voltage 2 I
OH
=-0.1mA
Low-level output voltage
Input current
Output current in off-state
Active supply current
(AC, MOS lev el )
I
OL
=2mA
V
I
=0
~
Vcc
/S=V
IH
or or /OE=V
IH
, V
I/O
=0
~
Vcc
55ns
_
/S<0.2V,
Other inputs<0.2V or >Vcc-0.2V 70ns
Output-open
1MHz
/S=V
IL
,
other inputs=V
IH
or V
IL
Output-open
~25°C
_
/S>Vcc-0.2V,
other inputs=0~Vcc
0.4
±1
±1
30
25
2
30
25
4
0.1
45
40
4
50
45
8
2
0.4
6
1.2
20
5
40
3
V
µA
µA
mA
55ns
70ns
1MHz
-LL,-LLI
-XL
-LL,-LLI
-XL
-LL,-LLI
-XL
-LLI
Icc
2
Active supply current
(AC, TTL lev el )
mA
Icc
3
Stand-by current
~40°C
~70°C
~85°C
µA
Icc
4
Stand-by current
/S=V
IH
,other inputs=0
~
Vcc
mA
_
* -3.0V in case of AC ( Pulse width < 30ns )
CAPACITANCE
Symbol
C
I
C
O
( Vcc=5V±10%, unless otherwise noted)
Parameter
Input capacitance
Output capacitance
Test conditions
V
I
=GND, V
I
=25mVrms, f=1MHz
V
O
=GND,V
O
=25mVrms, f=1MHz
Limits
Min Typ Max
6
8
Unit
pF
pF
Note 0: Direction f or current f lowing into an IC is positiv e (no mark).
1: Ty pical v alue is one at Ta = 25°C.
2: C
I
, C
O
are periodically sampled and are not 100% tested.
3
RENESAS [ RENESAS TECHNOLOGY CORP ]
