4283 Group
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Conditions
Ratings
Unit
V
–0.3 to 5
Supply voltage
Input voltage
VI
–0.3 to VDD+0.3
–0.3 to VDD+0.3
300
V
VO
Pd
Output voltage
Power dissipation
V
Ta = 25 °C
mW
°C
°C
Topr
Tstg
Operating temperature range
Storage temperature range
–20 to 85
–40 to 125
RECOMMENDED OPERATING CONDITIONS
(Ta = –20 °C to 85 °C, VDD = 1.8 V to 3.6 V, unless otherwise noted)
Limits
Symbol
Parameter
Conditions
Unit
Min.
1.8
Typ.
Max.
3.6
VDD
VRAM
VSS
VIH
Supply voltage
V
V
RAM back-up voltage (at RAM back-up mode)
Supply voltage
1.1
3.6
0
V
“H” level input voltage Ports D4–D7, E, G
“H” level input voltage XIN
VDD = 3.0 V
0.7VDD
VDD
VDD
0.2VDD
0.2VDD
–4
V
0.8VDD
V
VIH
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VDD = 3.0 V
VIL
“L” level input voltage Ports D4–D7, E, G
“L” level input voltage XIN
0
0
V
VIL
V
IOH(peak) “H” level peak output current Ports D, E1, G
IOH(peak) “H” level peak output current Port E0
IOH(peak) “H” level peak output current CARR
IOL(peak) “L” level peak output current CARR
IOH(avg) “H” level average output current Ports D, E1, G
IOH(avg) “H” level average output current Port E0
IOH(avg) “H” level average output current CARR
IOL(avg) “L” level average output current CARR
mA
mA
mA
mA
mA
mA
mA
mA
MHz
kHz
V
–24
–20
4
–2
–12
–10
2
f(XIN)
VDET
TDET
TPON
System clock frequency when STCK = f(XIN)/8 selected Ceramic resonance
when STCK = f(XIN) selected Ceramic resonance
Voltage drop detection circuit detection voltage
Ta=25 °C
4
500
1.80
1.56
1.2
1.10
1.40
1.50
0.2
When supply voltage passes
Voltage drop detection circuit low voltage
determination time
ms
ms
the detected voltage at ±50V/s.
VDD = 0 to 2.2 V
Power-on reset circuit valid power source rising time
1
Note: The average output current ratings are the average current value during 100 ms.
Rev.1.01 Mar 20, 2006 page 60 of 62
REJ03B0109-0101
RENESAS [ RENESAS TECHNOLOGY CORP ]
