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HN58V65AFP-10 参数 Datasheet PDF下载

HN58V65AFP-10图片预览
型号: HN58V65AFP-10
PDF下载: 下载PDF文件 查看货源
内容描述: 64K的EEPROM ( 8千字× 8位)就绪/忙功能, RES功能( HN58V66A ) [64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 28 页 / 257 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HN58V65A Series, HN58V66A Series
AC Characteristics
(Ta = 0 to + 70°C, V
CC
= 2.7 to 5.5 V)
Test Conditions
Input pulse levels :
0.4 V to 2.4 V (V
CC
= 2.7 to 3.6 V), 0.4 V to 3.0 V (V
CC
= 3.6 to 5.5 V)
2
0 V to V
CC
(RES pin* )
Input rise and fall time :
5 ns
Input timing reference levels : 0.8, 1.8 V
Output load : 1TTL Gate +100 pF
Output reference levels : 1.5 V, 1.5 V
Read Cycle 1
(2.7 V
V
CC
<
4.5 V)
HN58V65A/HN58V66A
-10
Parameter
Address to output delay
CE
to output delay
OE
to output delay
Address to output hold
OE
(CE) high to output float*
RES
low to output float*
RES
to output delay*
2
1, 2
1
Symbol
t
ACC
t
CE
t
OE
t
OH
t
DF
t
DFR
t
RR
Min
10
0
0
0
0
Max
100
100
50
40
350
450
Unit
ns
ns
ns
ns
ns
ns
ns
Test conditions
CE
=
OE
= V
IL
,
WE
= V
IH
OE
= V
IL
,
WE
= V
IH
CE
= V
IL
,
WE
= V
IH
CE
=
OE
= V
IL
,
WE
= V
IH
CE
= V
IL
,
WE
= V
IH
CE
=
OE
= V
IL
,
WE
= V
IH
CE
=
OE=
V
IL
,
WE
= V
IH
Rev.3.00, Dec. 04.2003, page 8 of 26