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HIP6601BCBZA-T 参数 Datasheet PDF下载

HIP6601BCBZA-T图片预览
型号: HIP6601BCBZA-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70°]
分类和应用: 驱动光电二极管接口集成电路驱动器
文件页数/大小: 14 页 / 684 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HIP6601B, HIP6603B, HIP6604B
Synchronous Rectified BuckMOSFET Drivers
N O T R E C O MM E
NDED FOR NEW
DESIGNS
NO RECOMMEN
DED REPL ACEM
ENT
contact our Tech
nical Support C
enter at
1-888-INTERSIL
or www.intersil.c
om/tsc
DATASHEET
FN9072
Rev 9.00
December 10, 2015
The HIP6601B, HIP6603B and HIP6604B are high-
frequency, dual MOSFET drivers specifically designed to
drive two power N-Channel MOSFETs in a synchronous
rectified buck converter topology. These drivers combined
with a HIP63xx or the ISL65xx series of Multi-Phase Buck
PWM controllers and MOSFETs form a complete core-
voltage regulator solution for advanced microprocessors.
The HIP6601B drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603B drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604B can be configured as
either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and
HIP6604B have the capacity to efficiently switch power
MOSFETs at frequencies up to 2MHz. Each driver is
capable of driving a 3000pF load with a 30ns propagation
delay and 50ns transition time. These products implement
bootstrapping on the upper gate with only an external
capacitor required. This reduces implementation complexity
and allows the use of higher performance, cost effective,
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat
No Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters
Related Literature
• Technical Brief
Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
FN9072 Rev 9.00
December 10, 2015
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