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HD64F3337YF16 参数 Datasheet PDF下载

HD64F3337YF16图片预览
型号: HD64F3337YF16
PDF下载: 下载PDF文件 查看货源
内容描述: 单片机 [Single-Chip Microcomputer]
分类和应用: 微控制器和处理器外围集成电路
文件页数/大小: 747 页 / 2993 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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18.3.2  
Notes on Programming  
(1) A PROM programmer that does not allow start address setting cannot be used. If such a  
PROM programmer is used, it will not be possible to perform verification at addresses H'10002,  
H'10003, H'10004, and so on. Therefore a PROM programmer that allows address setting must be  
used.  
(2) Program with the specified voltages and timing. The programming voltage (VPP) is  
12.5 V.  
Caution: Applied voltages in excess of the specified values can permanently destroy the chip. Be  
particularly careful about the PROM programmer’s overshoot characteristics.  
If the PROM programmer is set to HN27C101 specifications, VPP will be 12.5 V.  
(3) Before writing data, check that the socket adapter and chip are correctly mounted in the  
PROM writer. Overcurrent damage to the chip can result if the index marks on the PROM  
programmer, socket adapter, and chip are not correctly aligned.  
(4) Don’t touch the socket adapter or chip while writing. Touching either of these can cause  
contact faults and write errors.  
(5) Page programming is not supported. Do not select page programming mode.  
(6) The H8/3337Y PROM size is 60 kbytes. The H8/3334Y PROM size is 32 kbytes. Set the  
address range to H'0000 to H'F77F for the H8/3337Y, and to H'0000 to H'7FFF for the H8/3334Y.  
When programming, specify H'FF data for unused address areas (H'F780 to H'1FFFF in the  
H8/3337Y, H'8000 to H'1FFFF in the H8/3334Y).  
18.3.3  
Reliability of Programmed Data  
An effective way to assure the data holding characteristics of the programmed chips is to bake  
them at 150˚C, then screen them for data errors. This procedure quickly eliminates chips with  
PROM memory cells prone to early failure.  
Figure 18.7 shows the recommended screening procedure.  
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