HAT3004R
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Tc = –25°C
5
75°C
2
25°C
1
0.5
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
10
200
100
50
20
10
5
–0.1 –0.2
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
–0.5
–1
–2
–5
–10
0.2
0.1
–0.2
V
DS
= –10 V
Pulse Test
–0.5
–1
–2
–5
–10 –20
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
10000
3000
1000
Ciss
300
100
30
10
0
–10
–20
–30
–40
–50
Coss
Crss
0
Reverse Drain Current
I
DR
(A)
Dynamic Input Characteristics
V
DD
= –5 V
–10 V
–25 V
Capacitance C (pF)
–10
–4
Drain to Source Voltage
–20
V
DS
–30
V
DD
= –25 V
–10 V
–5 V
I
D
= –3.5 A
0
4
8
V
GS
–8
–12
–40
–16
V
GS
= 0
f = 1 MHz
–50
12
16
–20
20
Drain to Source Voltage V
DS
(V)
Gate Charge
Qg (nc)
Switching Characteristics
500
V
GS
= –4 V, V
DD
= –10 V
PW = 3
µs,
duty
≤
1 %
–20
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Pulse Test
Switching Time t (ns)
200
100
50
tr
tf
td(on)
td(off)
–16
V
GS
=
–
5 V
–12
–8
0, 5 V
20
10
5
–0.1 –0.2
–4
0
–0.5
–1
–2
–5
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain Current
I
D
(A)
Source to Drain Voltage
V
SD
(V)
Rev.11.00 Sep 07, 2005 page 7 of 10
Gate to Source Voltage
V
GS
(V)
0
RENESAS [ RENESAS TECHNOLOGY CORP ]
