HAT3004R
P Channel
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
5. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–30
±20
—
—
–1.0
—
—
2.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.12
0.20
3.5
350
230
75
18
110
20
30
–1.0
60
Max
—
—
±10
–10
–2.5
0.16
0.34
—
—
—
—
—
—
—
—
–1.5
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= –3.5 A, V
GS
= 0
I
F
= –3.5 A, V
GS
= 0
di
F
/dt = 20 A/µs
Note 5
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –2 A, V
GS
= –10 V
Note 5
I
D
= –2 A, V
GS
= –4 V
I
D
= –2 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –4 V, I
D
= –2 A
V
DD
≅
–10 V
Note 5
Note 5
Rev.11.00 Sep 07, 2005 page 3 of 10
RENESAS [ RENESAS TECHNOLOGY CORP ]
