HAT2195R
Body Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
3000
1000
300
100
30
10
0
Coss
Crss
50
20
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
Capacitance C (pF)
10
0.1
V
GS
= 0
f = 1 MHz
5
10
15
20
25
(V)
30
Drain to Source Voltage V
DS
Switching Characteristics
V
DS
(V)
50
Switching Time t (ns)
40
V
GS
V
GS
(V)
I
D
= 18 A
20
1000
300
100
30
10
3
1
0.1
td(off)
tr
16
Drain to Source Voltage
30
V
DS
12
V
DD
= 25 V
10 V
5V 8
V
DD
= 25 V
10 V
5V
20
40
60
80
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
4
0
100
Gate to Source Voltage
20
td(on)
tf
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty < 1 %
0.3
1
3
Drain Current
10
30
I
D
(A)
100
10
0
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
Reverse Drain Current I
DR
(A)
50
I
AP
= 18 A
V
DD
= 15 V
duty < 0.1 %
Rg > 50
Ω
40
10 V
5V
V
GS
= –5.0 V
40
30
30
20
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
V
SD
(V)
2.0
Source to Drain Voltage
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Rev.3.00, Apr.01.2004, page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
