欢迎访问ic37.com |
会员登录 免费注册
发布采购

HAT2195R 参数 Datasheet PDF下载

HAT2195R图片预览
型号: HAT2195R
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N通道功率MOS FET电源开关 [Silicon N Channel Power MOS FET Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 7 页 / 84 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号HAT2195R的Datasheet PDF文件第1页浏览型号HAT2195R的Datasheet PDF文件第2页浏览型号HAT2195R的Datasheet PDF文件第4页浏览型号HAT2195R的Datasheet PDF文件第5页浏览型号HAT2195R的Datasheet PDF文件第6页浏览型号HAT2195R的Datasheet PDF文件第7页  
HAT2195R
Typical Output Characteristics
50
10 V
4V
2.8 V
50
V
DS
= 10 V
Pulse Test
40
I
D
(A)
Typical Transfer Characteristics
I
D
(A)
40
30
Drain Current
2.6 V
30
25°C
Tc = 75°C
–25°C
20
V
GS
= 2.4 V
Drain Current
20
10
10
Pulse Test
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
1
2
3
Gate to Source Voltage
4
V
GS
(V)
5
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(mV)
200
Pulse Test
160
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V
GS
= 4.5 V
5
10 V
2
1
1
3
10
30 100 300
Drain Current I
D
(A)
1000
Drain to Source Voltage
120
I
D
= 20 A
80
10 A
40
5A
0
4
8
12
Gate to Source Voltage
16
20
V
GS
(V)
Forward Transfer Admittance |yfs| (S)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Temperature
12
Pulse Test
10
5 A, 10 A
8
V
GS
= 4.5 V
6
I
D
= 5 A, 10 A, 20 A
10 V
2
–25
0 25 50 75 100 125 150
Case Temperature Tc (°C)
20 A
Forward Transfer Admittance vs.
Drain Current
1000
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
V
DS
= 10 V
Pulse Test
10
30
100
25 °C
75 °C
Tc = –25 °C
4
Drain Current
I
D
(A)
Rev.3.00, Apr.01.2004, page 3 of 6