HAT2167H
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8
V
GS
= 4.5 V
6
10 A, 20 A, 50 A
10 V
2
0
-25
I D = 50 A
10 A, 20 A
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
V
DS
= 10 V
Pulse Test
10
30
100
Tc = -25°C
25°C
75°C
4
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
Coss
300
Crss
100
30
10
V
GS
= 0
f = 1 MHz
0
5
10
15
20
25
30
Ciss
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
100
50
20
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
10
0.1
Reverse Drain Current
I
DR
(A)
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
I
D
= 30 A
V
DD
= 25 V
10 V
5V
V
DS
V
GS
V
GS
(V)
50
20
1000
40
16
Switching Time t (ns)
300
100
30
td(on)
10
tf
3
1
0.1
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
0.3
1
3
10
30
100
td(off)
tr
Drain to Source Voltage
30
12
20
8
10
0
0
20
V
DD
= 25 V
10 V
5V
40
60
80
4
0
100
Gate to Source Voltage
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.5.00 Sep 20, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
