欢迎访问ic37.com |
会员登录 免费注册
发布采购

HAT2167H-EL-E 参数 Datasheet PDF下载

HAT2167H-EL-E图片预览
型号: HAT2167H-EL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N通道功率MOS FET电源开关 [Silicon N Channel Power MOS FET Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 8 页 / 89 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号HAT2167H-EL-E的Datasheet PDF文件第1页浏览型号HAT2167H-EL-E的Datasheet PDF文件第2页浏览型号HAT2167H-EL-E的Datasheet PDF文件第4页浏览型号HAT2167H-EL-E的Datasheet PDF文件第5页浏览型号HAT2167H-EL-E的Datasheet PDF文件第6页浏览型号HAT2167H-EL-E的Datasheet PDF文件第7页浏览型号HAT2167H-EL-E的Datasheet PDF文件第8页  
HAT2167H
Main Characteristics
Power vs. Temperature Derating
40
500
100
DC
Maximum Safe Operation Area
10
µs
PW
Op
era
Pch (W)
I
D
(A)
30
Channel Dissipation
10
=1
1m
10
s
0
µ
s
Drain Current
tio
20
nT
0m
s
c=
25
°
C
1
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
1 shot Pulse
0.3
1
3
10
0.1
0
50
100
150
200
0.01
0.1
10
30
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
10 V
3.0 V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
4.5 V
30
I
D
(A)
Drain Current
40
2.8 V
40
30
2.6 V
Drain Current
20
2.4 V
10
20
Tc = 75°C
10
25°C
-25°C
V
GS
= 2.2 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
10
V
GS
= 4.5 V
5
10 V
Drain to Source Voltage V
DS(on)
(mV)
300
200
I
D
= 50 A
20 A
2
100
10 A
0
4
8
12
16
20
Pulse Test
1
1
0.3
10
3
100
30
1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.5.00 Sep 20, 2005 page 3 of 7