HAT2024R
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
2A
0.12
V
GS
= 4 V
0.08
1 A, 2 A, 5 A
10 V
0
–40
0
40
80
120
160
I
D
= 5 A
1A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
20
10
5
2
1
0.5
0.2
0.1
0.2
0.5
1
2
V
DS
= 10 V
Pulse Test
5
10
20
25°C
Tc = –25°C
75°C
0.04
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200
100
50
Ciss
200
100
50
20
10
Crss
Coss
20
10
5
0.1
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
0.2
0.5
1
2
5
10
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
20
Dynamic Input Characteristics
V
DS
(V)
50
40
V
DD
= 5 V
10 V
20 V
V
GS
V
DD
= 20 V
10 V
5V
0
2
4
6
8
16
Reverse Drain Current I
DR
(A)
I
D
= 5.5 A
16
V
GS
= 5 V
12
0, –5 V
Drain to Source Voltage
30
V
DS
20
12
8
Gate to Source Voltage
8
10
4
4
Pulse Test
0
0
0.4
0.8
1.2
1.6
2.0
0
0
10
Gate Charge
Qg (nc)
Source to Drain Voltage
V
SD
(V)
Rev.5.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
