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HAT2024R 参数 Datasheet PDF下载

HAT2024R图片预览
型号: HAT2024R
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道功率MOS FET高速电源开关 [Silicon N Channel Power MOS FET High Speed Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 8 页 / 97 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HAT2024R
Main Characteristics
Power vs. Temperature Derating
4.0
100
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
10 s
30
10
Maximum Safe Operation Area
10
µs
Pch (W)
I
D
(A)
3.0
10
DC
0
µ
PW
Channel Dissipation
3
1
0.3
0.1
Op
=
1m
10
s
s
Drain Current
er
2.0
1
Dr
ive
at
ion
ms
No
te
5
2
Dr
1.0
Op
Operation in
this area is
limited by R
DS (on)
(P
ive
W
1
er
Op
0
at
ion
at
er
s)
ion
0
0
50
100
150
200
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3
1
3
10
30
100
Ambient Temperature
Ta (°C)
Drain to Source Voltage
V
DS
(V)
Note 5:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
20
10 V 8 V 6 V
5V
Pulse Test
20
Typical Transfer Characteristics
25°C
(A)
(A)
Tc = 75°C
16
–25°C
16
4.5 V
4V
3.5 V
3V
V
GS
= 2.5 V
I
D
12
I
D
12
8
Drain Current
Drain Current
8
4
4
V
DS
= 10 V
Pulse Test
0
0
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS (on)
(V)
Pulse Test
0.4
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(Ω)
1
Pulse Test
0.5
0.5
Drain to Source Voltage
0.3
0.2
0.1
0.05
10 V
0.02
0.01
0.2
V
GS
= 4 V
I
D
= 5 A
0.2
2A
0.1
1A
0
0
2
4
6
8
10
0.5
1
2
5
10
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.5.00 Sep 07, 2005 page 3 of 7