HAT1043M
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance |yfs| (S)
250
Pulse Test
200
–1 A, –2 A
I
D
= –5 A
100
–2.5 V
–5 A
–1 A, –2 A
V
GS
= –4.5 V
0
–50
0
50
100
150
200
50
20
10
5
25°C
2
1
0.5
0.2
0.1
–0.1 –0.3
–1
–3
V
DS
= –10 V
Pulse Test
–10
–30 –50
75°C
Tc = –25°C
150
50
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
Coss
Crss
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
200
100
50
Capacitance C (pF)
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
–0.5
–1
–2
–5
–10
300
100
20
10
–0.1 –0.2
30
V
GS
= 0
f = 1 MHz
10
0
–4
–8
–12
–16
–20
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
–2
Switching Time t (ns)
–10
V
DD
= –5 V
–10 V
–20 V
V
GS
V
DS
V
DD
= –5 V
–10 V
–20 V
V
GS
(V)
0
0
1000
500
tr
200
100
50
20
td(on)
td(off)
tf
Drain to Source Voltage
–20
–4
–30
–6
–40
I
D
= –4.4 A
0
4
8
12
16
–8
Gate to Source Voltage
–50
–10
20
10 V
GS
= –4.5 V, V
DD
= –10 V
PW = 5
µs,
duty
≤
1 %
5
–5 –10 –20
–0.1 –0.2 –0.5 –1 –2
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.6.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
