HAT1043M
Main Characteristics
Power vs. Temperature Derating
2.0
–100
–30
10
µs
Maximum Safe Operation Area
Pch (W)
I
D
(A)
1.5
–10
–3
–1
–0.3
–0.1
Channel Dissipation
1.0
0.5
Drain Current
1
m
=1
s
DC
0m
Op
s(
1s
er
ho
at
ion
t)
(P
Operation in
W
≤
this area is
5
s)
limited by R
DS (on)
No
te
5
PW
100
µs
0
0
50
100
150
200
–0.03 Ta = 25°C
1 shot pulse
–0.01
–1
–0.1 –0.3
–3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 5:
When using the alumina ceramic board
(50
×
50
×
0.7 mm)
Test Condition:
When using the alumina ceramic board
(50
×
50
×
0.7 mm), (PW
≤
5 s)
Typical Output Characteristics
–10
–10 V
–4 V
Pulse Test
–10
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
Drain Current
–2 V
I
D
(A)
–8
–3 V
–2.5 V
–8
–6
–6
Drain Current
–4
–4
Tc = –25°C
75°C
0
0
–1
25°C
–2
–3
–4
–5
–2
V
GS
= –1.5 V
0
0
–2
–4
–6
–8
–10
–2
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
1000
Pulse Test
500
Drain to Source Saturation Voltage
V
DS (on)
(V)
–0.5
–0.4
200
100
50
V
GS
= –2.5 V
–0.3
I
D
= –5 A
–0.2
–2 A
–1 A
0
–4
–8
–12
–16
–20
–4.5 V
–0.1
20
10
–0.1 –0.2
0
–0.5 –1
–2
–5 –10 –20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.6.00 Sep 07, 2005 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
