HAT1020R
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance |yfs| (S)
0.20
Pulse Test
0.16
I
D
= –5 A
V
GS
= –4 V
0.08
–2 A, –1 A
20
10
5
25°C
2
1
0.5
V
DS
= –10 V
Pulse Test
0.2
–0.2
–0.5
–1
–2
–5
–10 –20
75°C
Tc = –25°C
0.12
0.04
–10 V
0
–40
0
40
–5 A, –2 A, –1 A
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
Crss
100
30
10
Ciss
Coss
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
100
50
20
10
5
–0.2
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
–0.5
–1
–2
–5
–10 –20
Capacitance C (pF)
200
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
–4
Switching Time t (ns)
–10
V
DD
= –5 V
–10 V
–25 V
V
GS
(V)
0
0
500
tr
200
100
50
Drain to Source Voltage
Gate to Source Voltage
–20
V
DS
V
DD
= –25 V
–10 V
–5 V
I
D
= –5 A
0
8
16
V
GS
–8
tf
td(off)
td(on)
–30
–12
20
10 V = –4 V, V = –10 V
GS
DD
PW = 3
µs,
duty
≤
1 %
5
–0.1 –0.2
–0.5 –1
–2
–40
–16
–50
24
32
–20
40
–5
–10
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.10.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
