HAT1020R
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
–100
–30
10
µs
100
µs
Pch (W)
I
D
(A)
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
≤
10 s
3.0
–10
–3
–1
–0.3
–0.1
DC
PW
1m
=
10
s
Channel Dissipation
Op
e
Drain Current
ra
2.0
tio
ms
No
te
4
Operation in
this area is
limited by R
DS (on)
n(
PW
≤
1
0s
)
1.0
0
0
50
100
150
200
–0.03 Ta = 25°C
1 shot pulse
–0.01
–1
–0.1 –0.3
–3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 4:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
–20
–10 V
–6 V
–5 V
–4.5 V
–20
–4 V
Pulse Test
–3.5 V
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
Drain Current
I
D
(A)
–16
–16
–12
–12
Drain Current
–8
–3 V
–8
Tc = –25°C
25°C
0
0
–1
–2
–3
–4
–5
–4
V
GS
= –2.5 V
0
0
–2
–4
–6
–8
–10
–4
75°C
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
V
DS (on)
(V)
–0.5
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
–0.4
0.2
0.1
0.05
–10 V
0.02
0.01
–0.2
V
GS
= –4 V
–0.3
I
D
= –5 A
–0.2
–2 A
–1 A
0
–2
–4
–6
–8
–10
–0.1
0
–0.5
–1
–2
–5
–10
–20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.10.00 Sep 07, 2005 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
