CY25BAH-8F
Application Example
V
CM
Xe Tube
V
GG
Drive Circuit
C
M
+
–
4
3
2
1
R
G(on)
10
Ω
R
G(off)
68
Ω
5
6
7
8
Control Signal
GE
Ω
V
CM
I
CP
C
M
V
GE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
300
µF
2.85 V
150 A
400
µF
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 25 mA. (In general, when R
G (off)
= 68Ω, it is
satisfied.)
3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured 5,000 shots under the charge current (I
Xe
≤
150 A : full luminescence
condition) of main capacitor (C
M
= 400
µF)
which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
