CY25BAH-8F
Electrical Characteristics
(Tch = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
V
CE(sat)
Cies
Min.
450
—
—
0.4
—
—
Typ.
—
—
—
0.6
3.5
6500
Max.
—
10
±10
1.2
7.0
—
Unit
V
µA
µA
V
V
pF
Test conditions
I
C
= 1 mA, V
GE
= 0 V
V
CE
= 400 V, V
GE
= 0 V
V
GE
=
±6
V, V
CE
= 0 V
V
CE
= 10 V, I
C
= 1 mA
I
C
= 150 A, V
GE
= 2.5 V
V
CE
= 25 V, V
GE
= 10 V,
f = 1MHz
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flasher Applications)
160
Pulse Collector Current I
CM
(A)
°C
C
M
µF
R
G
= 68Ω
120
80
40
0
0
1
2
3
4
5
6
Gate-Emitter Voltage V
GE
(V)
Rev.1.00, Aug.20.2004, page 2 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
