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3SK298 参数 Datasheet PDF下载

3SK298图片预览
型号: 3SK298
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道双栅MOS FET [Silicon N-Channel Dual Gate MOS FET]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
文件页数/大小: 9 页 / 191 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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3SK298
Noise Figure vs. Drain Current
3.0
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
Power Gain vs. Drain to Source Voltage
30
NF (dB)
PG (dB)
Power gain
2.4
24
Noise figure
1.8
18
1.2
12
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
2
4
6
8
10
0.6
0
1
6
2
5
10
20
0
Drain current
I
D
(mA)
Drain to source voltage
V
DS
(V)
Noise Figure vs. Drain to Source Voltage
2.0
20
Power Gain vs. Drain Current
NF (dB)
PG (dB)
Power gain
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
2
4
6
8
10
1.6
16
1.2
12
Noise figure
0.8
8
V
DS
= 6 V
V
G2S
= 3 V
f = 900 MHz
2
5
10
20
0.4
4
0
1
0
Drain to source voltage
V
DS
(V)
Drain current
I
D
(mA)
Noise Figure vs. Drain Current
10
V
DS
= 6 V
V
G2S
= 3 V
f = 900 MHz
Power Gain vs. Drain to Source Voltage
20
8
PG (dB)
Power gain
NF (dB)
16
6
12
Noise figure
4
8
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
2
0
1
4
2
5
10
20
0
Drain current
I
D
(mA)
Drain to source voltage
V
DS
(V)
Rev.3.00 Aug 10, 2005 page 4 of 8