2SK3149
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
250
Pulse Test
200
50
20
Tc = –25°C
10
75°C
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
25°C
150
15 A
100
V
GS
= 4 V
5,10 A
50
10 V
0
–40
0
40
15 A
5,10 A
80
120
160
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10000
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
5000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
200
100
50
20
10
5
2
1
0.1
0.3
1
Capacitance C (pF)
2000
1000
500
200
100
50
20
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
3
10 30
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
200
I
D
= 15 A
V
DD
= 100 V
50 V
25 V
Switching Characteristics
20
1000
500
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
td(off)
V
GS
160
16
Switching Time t (ns)
200
tf
120
V
DS
80
12
100
50
tr
8
40
V
DD
= 100 V
50 V
25 V
4
0
100
20
10
0.1 0.2
td(on)
0
20
40
60
80
0.5
1
2
50
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
