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2SK3149 参数 Datasheet PDF下载

2SK3149图片预览
型号: 2SK3149
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 开关电源开关局域网
文件页数/大小: 8 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK3149
Main Characteristics
Power vs. Temperature Derating
80
500
100
30
10
3
1
0.3
DC
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
60
40
20
Op
=1
0m
er
ati
s(
on
1s
(T
c =
ho
25
t)
Operation in
°
C
)
this area is
PW
µ
0
µ
s
1
m
s
s
10
10
0
50
100
150
200
limited by R
DS(on)
0.1
Ta = 25°C
0.05
0.5 1 2
5 10 20
50 100 200 500
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
4V
3.5 V
Pulse Test
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
3V
8
Drain Current I
D
(A)
16
10 V
6V
16
12
8
Tc = 75°C
4
–25°C
25°C
4
V
GS
=2.5 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
500
Pulse Test
200
100
50
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.5
Pulse Test
2.0
1.5
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
V
GS
= 4 V
1.0
I
D
= 15 A
0.5
10 A
5A
0
4
8
12
16
20
10 V
20
10
1
2
5
10
20
50
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 7