2SK2928
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.20
Pulse Test
0.16
I
D
= 10 A
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
20
10
5
Tc = –25°C
25°C
0.12
5A
0.08
2
1
0.5
0.1 0.2
75°C
0.04
10 V
0
–40
0
40
20 A 10 A 5 A
V
DS
= 10 V
Pulse Test
80
120
160
0.5
1
2
5
10 20
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
2000
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
20
10
5
0.1 0.2
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
500
200
100
50
20
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
0.5
1
2
5
10 20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 15 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1000
300
td(off)
100
V
GS
Switching Time t (ns)
80
V
DS
V
DD
= 10 V
25 V
50 V
16
100
30
10
3
1
0.1
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
tf
tr
td(on)
60
12
40
8
20
V
DD
= 50 V
25 V
10 V
4
0
400
0
8
16
24
32
0.2
0.5
1
2
5
10 20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
