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2SK2928 参数 Datasheet PDF下载

2SK2928图片预览
型号: 2SK2928
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 开关电源开关局域网
文件页数/大小: 8 页 / 87 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2928
Main Characteristics
Power vs. Temperature Derating
80
0
1000
300
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
60
100
30
10
3
1
0.3
DC
10
PW
Op
er
40
=
1
10
m
(T
10
µ
s
0
m
µ
s
s
1s
ho
t
)
ati
on
s(
20
Operation in
this area is
limited by R
DS(on)
3
c=
25
°
C
)
0
50
100
150
200
0.1 Ta = 25°C
0.1 0.3
1
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10 V 6 V 5 V
20
4 .5 V
4V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
3.5 V
8
3V
4
V
GS
= 2.5 V
Drain Current I
D
(A)
16
Pulse Test
16
12
8
Tc = 75°C
25°C
4
–25°C
10
0
1
2
3
4
5
0
2
4
6
8
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
10 V
0.02
0.01
1
2
5
10
20
50
100
V
GS
= 4 V
1.6
1.2
I
D
= 20 A
0.8
0.4
10 A
5A
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 7