2SK2788
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.5
Pulse Test
0.4
2A
0.3
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
10
Tc = –25°C
5
2
1
0.5
75°C
25°C
1A
0.2
1, 2 A
10 V
0
–40
0
40
80
120
160
0.1
0.2
0.1
0.1
V
DS
= 10 V
Pulse Test
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
1000
500
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
200
Capacitance C (pF)
100
50
20
10
5
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.2
0.5
1
2
5
10
200
100
50
Ciss
Coss
20
Crss
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 2 A
V
DD
= 10 V
25 V
50 V
V
DS
V
GS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
100
100
80
16
Switching Time t (ns)
50
20
10
5
td(off)
tf
tr
td(on)
60
12
40
8
20
V
DD
= 50 V
25 V
10 V
4
0
10
2
1
0.1
0.2
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0
2
4
6
8
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep. 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
