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2SK2788 参数 Datasheet PDF下载

2SK2788图片预览
型号: 2SK2788
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关小信号场效应晶体管电源开关
文件页数/大小: 7 页 / 78 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2788
Main Characteristics
Power vs. Temperature Derating
2.0
10
Test condition :
When using the alumina ceramic
board (12.5 x 20 x 0.7 mm)
100
µs
3
1
D
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
1.5
PW
C
=
1
10
m
s
m
s
1.0
0.3 Operation in
this area is
0.1 limited by R
DS(on)
0.03
0.01 Ta = 25°C
0.1 0.3
1
O
pe
t
ra
n
io
(T
c
=
(1
sh
ot
)
25
°
C
0.5
)
0
50
100
150
200
3
10
30
100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
6V 5V
4V
10 V
4
3.5 V
3
Pulse Test
5
Typical Transfer Characteristics
Drain Current I
D
(A)
3V
Drain Current I
D
(A)
4
Tc = 75°C
3
2
2.5 V
1
V
GS
= 2 V
2
–25°C
25°C
V
DS
= 10 V
Pulse Test
1
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V
GS
= 4 V
1.6
1.2
0.8
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
0.1
0.4
I
D
= 2 A
1A
2
4
6
8
10
10 V
0.3
1
3
10
30
100
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep. 07, 2005 page 3 of 6