2SK2554
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.02
Pulse Test
0.016
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
25°C
Tc = –25°C
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
0.012
I
D
= 50 A
V
GS
= 4 V
10, 20 A
0.008
10, 20, 50 A
0.004
10 V
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t rr (ns)
500
200
100
50
100000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
30000
10000
3000
1000
Ciss
Coss
20
10
5
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
Crss
300
100
V
GS
= 0
f = 1 MHz
0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 75 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
100
10000
3000
td(off)
1000
tf
300
100
tr
td(on)
80
V
DD
= 10 V
25 V
50 V
16
60
V
DS
12
40
V
GS
8
20
V
DD
= 50 V
25 V
10 V
80
160
240
320
4
0
400
Switching Time t (ns)
0
30
V = 10 V, V = 30 V
GS
DD
PW = 5
µs,
duty < 1 %
10
0.1 0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.6.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
