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2SK2554 参数 Datasheet PDF下载

2SK2554图片预览
型号: 2SK2554
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 8 页 / 89 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2554
Main Characteristics
Power vs. Temperature Derating
200
500
200
10
PW
C
D
Maximum Safe Operation Area
10
0
µ
s
Channel Dissipation Pch (W)
µ
s
Drain Current I
D
(A)
150
100
50
20
10
5
2
1
0.5 Ta = 25°C
0.1 0.3
1
Operation in
this area is
limited by R
DS(on)
=
1
10
m
s
m
(1
s
O
ra
pe
100
sh
o
t)
n
tio
(T
c
=
°
C
25
50
)
0
50
100
150
200
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V 5 V
4V
3V
Pulse Test
60
100
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
80
80
V
DS
= 10 V
Pulse Test
60
40
2.5 V
40
Tc = 75°C
20
25°C
–25°C
20
V
GS
= 2 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
0.1
0.05
0.02
0.01
0.005
10 V
0.002
0.001
1
3
10
30
100
300
1000
V
GS
= 4 V
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
0.4
0.3
I
D
= 50 A
0.2
20 A
10 A
0
2
4
6
8
10
0.1
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.0005
Drain Current I
D
(A)
Rev.6.00 Sep 07, 2005 page 3 of 7