2SK2202
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
1.0
Pulse Test
I
D
= 5 A
2A
1A
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
10
5
V
DS
= 10 V
Pulse Test
0.8
2
1
0.5
0.6
Tc = 75°C
25°C
–25°C
0.4
5A
1, 2 A
0.2
0
–40
10 V
0.2
0.1
0.1
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
2000
1000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
500
200
100
50
20
10
Ciss
200
100
50
20
10
0.1
di / dt = 50 A /
µs,
V
GS
= 0
Ta = 25°C, Pulse Test
0.2
0.5
1
2
5
10
Coss
Crss
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
200
V
GS
Switching Characteristics
20
500
Gate to Source Voltage V
GS
(V)
I
D
= 7 A
120
V
DS
Switching Time t (ns)
160
16
200
100
50
20
10
5
3
0.1
0.2
0.5
1
V
GS
= 10 V
V
DD
= 30 V
PW = 2
µs
duty < 1 %
td(off)
tf
tr
12
V
DD
= 100 V
50 V
25 V
V
DD
= 100 V
50 V
25 V
80
8
40
4
0
40
td(on)
0
8
16
24
32
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Sep 20, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
