欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK2202 参数 Datasheet PDF下载

2SK2202图片预览
型号: 2SK2202
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 7 页 / 81 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK2202的Datasheet PDF文件第1页浏览型号2SK2202的Datasheet PDF文件第2页浏览型号2SK2202的Datasheet PDF文件第4页浏览型号2SK2202的Datasheet PDF文件第5页浏览型号2SK2202的Datasheet PDF文件第6页浏览型号2SK2202的Datasheet PDF文件第7页  
2SK2202
Main Characteristics
Power vs. Temperature Derating
40
20
10
Maximum Safe Operation Area
10
µs
10
0
µ
s
m
s
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
5
2
1
0.5
0.2
0.1
DC
PW
1
=
10
m
s
O
pe
r
20
(T
Operation in
c
=
this area is
25
limited by R
DS(on)
°
at
io
n
(1
sh
ot
)
C)
10
Ta = 25°C
2
5
10
20
50
100 200
0
50
100
150
200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
Pulse Test
4V
3.5 V
6
3V
6V
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
V
DS
= 10 V
Pulse Test
6
4
4
Tc = –25°C
25°C
75°C
1
2
3
4
5
2
V
GS
= 2.5 V
2
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
I
D
= 5 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1.6
2
1
0.5
Pulse Test
1.2
0.8
2A
0.4
1A
V
GS
= 4 V
0.2
0.1
0.1 0.2
10 V
0
4
8
12
16
20
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Sep 20, 2005 page 3 of 6