2SK2225
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
20
I
D
= 2 A
10
5
2
1
0.5
V
DS
= 25 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
16
12
0.5 A, 1 A
Tc = –25°C
25°C
75°C
8
4
0
–40
V
GS
= 15 V
Pulse Test
0.2
0.1
0.05
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5000
10000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2000
1000
500
1000
Ciss
200
100
50
di / dt = 100 A /
µs,
Ta = 25°C
V
GS
= 0, Pulse Test
100
Coss
Crss
10
0.05 0.1
0.2
0.5
1
2
5
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
1000
Switching Characteristics
20
1000
Gate to Source Voltage V
GS
(V)
Switching Time t (ns)
800
V
DD
= 250 V
400 V
600 V
V
DS
500
16
V
GS
td(off)
200
100
V
GS
= 10 V
PW = 2
µs
duty < 1 %
600
12
400
8
V
DD
= 250 V
400 V
600 V
tf
50
tr
td(on)
200
I
D
= 2.5 A
60
80
4
20
10
0
20
40
0
100
0.05 0.1
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
