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2SK2221 参数 Datasheet PDF下载

2SK2221图片预览
型号: 2SK2221
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 6 页 / 72 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK2221的Datasheet PDF文件第1页浏览型号2SK2221的Datasheet PDF文件第2页浏览型号2SK2221的Datasheet PDF文件第4页浏览型号2SK2221的Datasheet PDF文件第5页浏览型号2SK2221的Datasheet PDF文件第6页  
2SK2220, 2SK2221
Main Characteristics
Power vs. Temperature Derating
150
20
Ta = 25°C
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
PW
=
PW
Drain Current I
D
(A)
10
100
5
D
C
m
s
=
0
10
m
s
pe
O
ra
(1
Sh
n
tio
ot
(1
2
1.0
0.5
)
ot
Sh
)
=
(T
C
25
50
2SK2220
°
C
)
2SK2221
0
50
100
150
0.2
5
10
20
50
100
200
500
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
V
GS
=
10 V
9
8
7
6
6
5
4
4
3
2
2
0
0
10
20
30
40
1
50
0
Pch = 125 W
T
C
= 25
°
C
10
Typical Output Characteristics
T
C
= 25
°
C
9
7
6
6
5
4
4
3
2
1
2
4
6
8
0
10
V
GS
= 10 V
8
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
2
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
10
V
DS
= 10 V
1.0
Typical Transfer Characteristics
25
°
C
Drain Current I
D
(A)
Drain Current I
D
(A)
=–
25
25
=–
0.4
0.2
0
0.4
0.8
°
C
T
1.2
C
8
0.8
V
DS
= 10 V
T
C
6
75
0.6
4
2
0
2
4
6
8
10
1.6
75
2.0
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage V
GS
(V)
Rev.2.00 Sep 07, 2005 page 3 of 5
25