欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK2221 参数 Datasheet PDF下载

2SK2221图片预览
型号: 2SK2221
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 6 页 / 72 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK2221的Datasheet PDF文件第1页浏览型号2SK2221的Datasheet PDF文件第3页浏览型号2SK2221的Datasheet PDF文件第4页浏览型号2SK2221的Datasheet PDF文件第5页浏览型号2SK2221的Datasheet PDF文件第6页  
2SK2220, 2SK2221
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK2220
2SK2221
Symbol
V
DSX
V
GSS
I
D
I
DR
Pch*
1
Tch
Tstg
Ratings
180
200
±20
8
8
100
150
–55 to +150
Unit
V
V
A
A
W
°
C
°
C
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK2220
2SK2221
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse Test
Symbol
V
(BR)DSX
V
(BR)GSS
V
GS(off)
V
DS(sat)
|y
fs
|
Ciss
Coss
Crss
t
on
t
off
Min
180
200
±20
0.15
0.7
Typ
1.0
600
800
8
250
90
Max
1.45
12
1.4
Unit
V
V
V
V
S
pF
pF
pF
ns
ns
Test conditions
I
D
= 10 mA, V
GS
= –10 V
I
G
=
±100 µA,
V
DS
= 0
I
D
= 100 mA, V
DS
= 10 V
I
D
= 8 A, V
GD
= 0 V*
2
I
D
= 3 A, V
DS
= 10 V*
2
V
GS
= –5 V, V
DS
= 10 V,
f = 1 MHz
V
DD
= 30 V, I
D
= 4 A
Rev.2.00 Sep 07, 2005 page 2 of 5