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2SK216 参数 Datasheet PDF下载

2SK216图片预览
型号: 2SK216
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 6 页 / 65 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK213, 2SK214, 2SK215, 2SK216
Main Characteristics
Power vs. Temperature Derating
60
500
Typical Output Characteristics
3.5
T
C
= 25°C
3.0
400
Channel Dissipation Pch (W)
Drain Current I
D
(mA)
40
2.5
300
2.0
200
1.5
20
100
1.0
V
GS
= 0.5 V
4
8
12
16
20
0
50
100
150
0
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
Typical Transfer Characteristics
500
T
C
= 25
°
C
0.8
V
DS
= 20 V
Drain Current I
D
(mA)
Drain Current I
D
(mA)
0.7
0.6
0.5
0.4
30
300
20
200
10
0.3
0.2
V
GS
= 0.1 V
100
0
20
40
60
80
100
0
1
T
C
2
=–
40
400
25
°
C
25
75
3
4
5
Drain to Source Voltage V
DS
(V)
Gate Source Voltage V
GS
(V)
Forward Transfer Admittance
vs. Drain Current
200
100
100
Drain Current I
D
(mA)
80
T
C
=
–25
°
C
25
75
V
DS
= 20 V
Forward Transfer Admittance
y
fs
(mS)
Typical Transfer Characteristics
50
60
20
10
5
T
C
= 25°C
V
DS
= 20 V
40
20
0
0.4
0.8
1.2
1.6
2.0
2
5
10
20
50
100 200
Gate Source Voltage V
GS
(V)
Drain Current I
D
(mA)
Rev.2.00 Sep 07, 2005 page 3 of 5