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2SK216 参数 Datasheet PDF下载

2SK216图片预览
型号: 2SK216
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 6 页 / 65 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK213
2SK214
2SK215
2SK216
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. Value at T
C
= 25
°
C
V
GSS
I
D
I
DR
Pch
1
Pch*
Tch
Tstg
Symbol
V
DSX
Ratings
140
160
180
200
±15
500
500
1.75
30
150
–45 to +150
V
mA
mA
W
W
Unit
V
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown 2SK213
voltage
2SK214
2SK215
2SK216
Gate to source breakdown voltage
Gate to source voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Note:
2. Pulse test
Symbol
V
(BR)DSX
Min
140
160
180
V
(BR)GSS
V
GS(on)
V
DS(sat)
|y
fs
|
Ciss
Crss
200
±15
0.2
20
Typ
40
90
2.2
Max
1.5
2.0
Unit
V
V
V
V
V
V
V
mS
pF
pF
I
G
= ±10 µA, V
DS
= 0
I
D
= 10 mA, V
DS
= 10 V *
2
I
D
= 10 mA, V
GD
= 0 *
I
D
= 10 mA, V
DS
= 20 V *
I
D
= 10 mA, V
DS
= 10 V,
f = 1 MHz
2
Test conditions
I
D
= 1 mA, V
GS
= –2 V
2
Rev.2.00 Sep 07, 2005 page 2 of 5