2SK1947
Static Drain to Source on State
Resistance vs. Temperature
0.20
0.16
0.12
I
D
= 50 A
0.08
10 A, 20 A
0.04
0
–40
Pulse Test
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
100
50
20
–25°C
10
5
2
1
0.5
75°C
Pulse Test
V
DS
= 10 V
Tc = 25°C
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10000
di/dt = 100 A/
µ
s
V
GS
= 0, Ta = 25°C
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
20
10
5
1
1000
Coss
100
V
GS
= 0
f = 1 MHz
10
Crss
2
5
10
20
50
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
400
300
V
DS
200
100
V
DD
= 200 V
100 V
50 V
80
160
240
320
8
4
0
400
V
DD
= 200 V
100 V
50 V
V
GS
16
12
20
1000
Switching Characteristics
Switching Time t (ns)
500
200
100
50
20
tf
td(off)
tr
I
D
= 50 A
td(on)
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
0
10
0.5
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
