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2SK1947 参数 Datasheet PDF下载

2SK1947图片预览
型号: 2SK1947
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1947
Main Characteristics
Power vs. Temperature Derating
300
1000
300
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
0.1
200
100
10
10
µ
s
0
µ
DC
PW
s
1m
Op
=
s
era
10
ms
tio
n(
Tc
(1
Operation in this
= 2
sho
5 C
t)
area is limited
)
by R
DS
(on)
Ta = 25°C
1
3
10
30
100 300
1000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V
8V
80
60
40
20
6V
50
40
30
20
10
Typical Transfer Characteristics
Drain Current I
D
(A)
5.5 V
5V
4V
V
GS
= 3.5 V
4
8
12
16
20
Drain Current I
D
(A)
V
DS
= 10 V
Pulse Test
Tc = 25°C
75°C
–25°C
0
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
0.01
V
GS
= 10 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
5
Pulse Test
4
3
50 A
2
1
20 A
I
D
= 10 A
0
4
8
12
16
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.005
2
5
10
20
50
100 200
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6