2SK1772
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
2.0
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
5.0
2.0
Tc = 25°C
1.0
0.5
75°C
–25°C
Pulse test
1.6
1.2
2A
V
GS
= 4 V
1A
0.5 A
2A
V
GS
= 10 V
I
D
= 0.5 A, 1 A
80
120
160
0.8
0.2
0.1
0.05
0.02
0.05 0.1
0.2
V
DS
= 10 V
Pulse test
0.5
1.0
2.0
0.4
0
–40
0
40
Case Temperature
T
C
(°C)
Drain Current
I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
500
1000
di/dt = 50 A/µs
V
GS
= 0
Ta = 25°C
200
100
50
Typical Capacitance vs. Drain to
Source Voltage
(pF)
Capacitance
C
100
Ciss
Coss
Crss
20
10
5
0.02
0.05 0.1
0.2
0.5
1.0
2.0
10
V
GS
= 0
f = 1 MHz
10
20
30
40
50
1
0
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
Switching Characteristics
20
500
V
GS
= 10 V
V
DD
= 30 V
PW = 2
µs
duty
≤
1 %
tf
td(off)
I
D
= 1 A
V
GS
t (ns)
Switching Time
40
V
DD
= 5 V
16
200
100
50
Drain to Source Voltage
30
10 V
20 V
12
20
V
DS
8
20
10
5
0.02
0.05 0.1
10
V
DD
= 5 V
0.8
1.6
4
0
4.0
tr
td(on)
0
10 V
20 V
2.4
3.2
0.2
0.5
1.0
2.0
Gate Charge
Qg
(nc)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
