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2SK1772 参数 Datasheet PDF下载

2SK1772图片预览
型号: 2SK1772
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 75 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1772
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.6
Channel Power Dissipation Pch** (W)
(** on the almina ceramic board)
Maximum Safe Operation Area
10
Operation in this area is
limited by R
DS(on)
1.2
I
D
(A)
3
1
PW = 100
µs
PW
=
1
D
PW
C
O
pe
ra
=
Drain Current
0.8
0.3
0.1
0.03
0.01 Ta = 25°C
0.1 0.3
1
10
m
s
m
s
tio
n
0.4
0
50
100
150
200
3
10
30
100
Ambient Temperature
Ta (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
2.0
10 V
4V
3.5 V
1.0
Typical Transfer Characteristics
V
DS
= 10 V
Pulse test
I
D
(A)
1.6
I
D
(A)
Drain Current
5V
Pulse test
3.0 V
0.8
1.2
0.6
75°C
0.4
Tc = 25°C
–25°C
Drain Current
0.8
2.5 V
0.4
V
GS
= 2 V
0
1
2
3
4
5
0.2
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage V
DS(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
2.0
Pulse test
10
Static Drain to Source on State
Resistance vs. Drain Current
Pulse test
5
1.6
1.2
2A
1A
I
D
= 0.5 A
0
2
4
6
8
10
2
1
V
GS
= 4 V
0.5
10 V
0.2
0.1
0.05 0.1
0.2
0.5
1
2
5
0.8
0.4
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6