2SK1671
Static Drain to Source on State
Resistance vs. Temperature
0.2
V
GS
= 10 V
Pulse Test
0.16
I
D
= 30 A
20 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 10 V
Pulse Test
T
C
= –25°C
20
10
5
25°C
75°C
0.12
10 A
0.08
2
1
0.5
0.5
0.04
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time t rr (ns)
Ciss
Capacitance C (pF)
200
100
50
1,000
Coss
20
10
5
0.5
100
Crss
V
GS
= 0
f = 1 MHz
10
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C, Pulse Test
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
V
DD
= 50V
100 V
200 V
V
GS
20
500
Switching Characteristics
Gate to Source Voltage V
GS
(V)
t
d (off)
Switching Time t (ns)
400
16
200
100
t
r
50
20
10
5
0.5
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty < 1%
1
2
5
10
20
50
t
d (on)
t
f
300
V
DS
12
200
8
V
DD
= 200 V
100 V
50 V
40
80
120
100
4
I
D
= 30 A
Pulse Test
160
0
200
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
