2SK1579
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 5 V
Pulse Test
20
10
5
Ta = –25°C
25°C
75°C
0.8
0.6
I
D
= 1 A
0.5 A
I
D
= 0.5 A
V
GS
= 2 V
0.4
V
GS
= 4 V
2
1
0.05
0.2
0.2
1A
0
–25
2A
0
25
50
75
100
0.5
1
2
5
10
20
Case Temperature T
C
(°C)
Reverse Drain Current vs.
Source to Drain Voltage
5
500
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Drain Current I
DR
(A)
Coss
Capacitance C (pF)
4
200
Ciss
100
50
Crss
3
2
V
GS
= 2 V
V
GS
= 0
20
10
5
0.1
V
GS
= 0
f = 1 MHz
0.2
0.5
1
2
5
10
1
0
0
1.0
2.0
Source to Drain Voltage V
SD
(V)
Drain to Source Voltage V
DS
(V)
Switching Characteristics
5,000
Switching Time t (ns)
V
GS
= 4 V, V
DD
= 10 V
PW = 2
µs,
Duty cycle = 1%
2,000
1,000
500
tf
tr
td(on)
0.2
0.5
1
2
5
td(off)
200
100
50
0.05 0.1
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
