2SK1579
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel power dissipation
Channel temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
12
±7
2
4
2
1
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Storage temperature
Tstg
Notes: 1. PW
≤
100 µs, duty cycle
≤
10%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source cutoff current
Gate to source cutoff current
Gate to source cutoff voltage
Drain to source on resistance (1)
Drain to source on resistance (2)
DC forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on time
Turn-off time
Note:
3. Pulse Test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
1
R
DS(on)
2
|y
fs
|
Ciss
Crss
Coss
t
(on)
t
(off)
Min
—
—
0.4
—
—
1
—
—
—
—
—
Typ
—
—
—
0.36
0.25
2.5
110
30
150
500
1500
Max
1
±5
1.4
0.7
0.35
—
—
—
—
—
—
Unit
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
Test conditions
V
DS
= 8 V, V
GS
= 0
V
GS
=
±6.5
V, V
DS
= 0
V
DS
= 5 V, I
D
= 100
µA
V
GS
= 2.2 V, I
D
= 0.5 A
*3
V
GS
= 4 V, I
D
= 1 A
V
DS
= 5 V, I
D
= 1 A,
*3
∆V
GS
= 0.1 V
V
DS
= 5 V, V
GS
= 0,
f = 1 MHz
I
D
= 0.2 A, V
GS
= 0,
*3
Vin = 4 V, R
L
= 51
Ω
*3
Rev.2.00 Sep 07, 2005 page 2 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
