2SK1405
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
2.0
1.6
1.2
0.8
0.4
50
Pulse Test
20
10
TC = –25°C
25°C
75°C
10 A
5
ID = 20 A
VGS = 10 V
2
1
5 A
VDS = 10 V
Pulse Test
0.5
0
0.2
0.5
1
2
5
10
20
–40
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
200
10,000
1,000
100
Ciss
100
50
Coss
20
di/dt = 100 A/µs, VGS = 0
Ta = 25°C
Pulse Test
10
5
Crss
VGS = 0
f = 1 MHz
10
0
10
20
30
40
50
0.2
0.5
1
2
5
10
20
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
Switching Characteristics
td (off)
20
500
1,000
800
600
400
200
VDD = 100 V
250 V
400 V
200
100
50
16
12
8
tf
VGS
tr
td (on)
VDS
ID = 15 A
20
10
5
4
0
VDD = 400 V
250 V
100 V
VGS = 10 V, VDD = 30 V
PW = 2 µs, duty ≤ 1 %
40
80
120
160
200
0
0.2
0.5
1
2
5
10
20
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.3.00 May 15, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
