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2SK1405 参数 Datasheet PDF下载

2SK1405图片预览
型号: 2SK1405
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 92 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1405
Main Characteristics
Power vs. Temperature Derating
80
Maximum Safe Operation Area
100
30
ea
ar
is
(on)
th
S
in
n y R
D
PW
tio b
ra d
pe mite
=
O li
10
DC
is
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
10
3
1
0.3
0.1
0.03
0.01
40
20
1
m
s
m
Op
s(
er
1
at
ion
Sho
tp
(T
uls
C
=
25
e)
°
C
)
1
10
0
µ
s
0
µ
s
Ta = 25
°
C
1
3
10
30
100
300 1,000
0
50
100
150
200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
6V
5V
Pulse Test
12
4.5 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
16
12
8
8
4
V
GS
= 4 V
4
T
C
= 75°C
25°C
–25°C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
20 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
0.1
0.05
1
2
5
10
20
50
100
V
GS
= 10, 15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
6
4
10 A
I
D
= 5 A
2
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 3 of 6