2SK1167, 2SK1168
Static Drain to Source on State
Resistance vs. Temperature
1.0
V
GS
= 10 V
Pulse Test
I
D
= 20 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
20
10
5
V
DS
= 20 V
Pulse Test
–25°C
T
C
= 25°C
75°C
0.8
0.6
0.4
5A
0.2
10 A
2
1.0
0.5
0.2
0
–40
0
40
80
120
160
0.5
1.0
2
5
10
20
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
5,000
2,000
1,000
500
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
Ciss
1,000
Coss
200
100
50
0.2
100
Crss
10
0.5
1.0
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
V
DD
= 100 V
400
V
DS
300
250 V
400 V
V
GS
12
16
20
1,000
Switching Characteristics
Gate to Source Voltage V
GS
(V)
V
GS
= 10 V, V
DD
30 V
PW = 2
µs,
duty < 1%
t
d (off)
t
r
t
f
Switching Time t (ns)
500
200
100
50
200
100
V
DD
= 400 V
250 V
100 V
20
40
60
I
D
= 15 A
8
4
t
d (on)
20
10
0.5
0
80
0
100
1.0
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
