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2SK1167 参数 Datasheet PDF下载

2SK1167图片预览
型号: 2SK1167
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1167, 2SK1168
Main Characteristics
Power vs. Temperature Derating
100
150
30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
D
10
3
1.0
0.3
0.1
100
50
s
ra
ms
tio
(1
n
(T
Sho
C
=
t)
25
°
C
Operation in this area
)
is limited by R
DS (on)
pe
C
PW
10
=
10
0
µ
s
µ
s
1
10
O
m
Ta= 25
°
C
1
3
10
2SK1168
2SK1167
30
100
300
1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
6V
Pulse Test
12
5.0 V
20
5.5 V
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
16
12
8
4.5 V
4
V
GS
= 4 V
0
4
8
12
16
20
8
4
75
°
C
–25
°
C
T
C
= 25
°
C
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
2
1.0
0.5
V
GS
= 10 V
Pulse Test
Drain to Source Saturation Voltage
V
DS
(on) (V)
10
Pulse Test
20 A
6
8
4
2
10 A
I
D
= 5 A
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.2
0.1
0.05
1
2
5
10
20
15 V
0
4
8
12
16
20
50
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6