2SK1155, 2SK1156
Main Characteristics
Power vs. Temperature Derating
60
50
20
10
Ar
ea
O
is per
Lim at
ite ion
d b in
y R this
(o
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
0
µ
s
Drain Current I
D
(A)
10
5
2
1.0
0.5
0.2
0.1
0.05
µ
s
DS
40
PW
1
=
10
m
s
D
m
(1
n)
C
s
sh
ot
)
O
pe
ra
tio
n
20
(T
C
=
25
°
C
Ta = 25°C
)
2SK1156
2SK1155
10
30
100
300
1,000
0
50
100
150
1
3
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
Pulse Test
5.5 V
10
Typical Transfer Characteristics
–25°C
V
DS
= 20 V
Pulse Test
75°C
6
6V
T
C
= 25°C
Drain Current I
D
(A)
6
5.0 V
4
4.5 V
2
V
GS
= 4 V
0
10
20
30
40
50
Drain Current I
D
(A)
8
8
4
2
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
V
GS
= 10 V
15 V
Drain to Source Saturation Voltage V
DS
(on) (V)
8
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
6
5A
2
1.0
0.5
4
2A
I
D
= 1 A
0
4
8
12
16
20
2
0.2
0.1
0.5
1.0
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
