2SJ553(L), 2SJ553(S)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.10
Pulse Test
0.08
–20 A
I
D
= –50 A
0.06
V
GS
= –4 V
0.04
–50 A
–10 A, –20 A
0.02
–10 V
–10 A
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
0.1
–0.1 –0.3
Forward Transfer Admittance vs.
Drain Current
V
DS
= –10 V
Pulse Test
–1
–3
–10
–30
–100
0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
Ciss
Coss
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200
100
50
1000
300
100
30
10
Crss
20
10
–0.1 –0.3
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
–1
–3
–10
–30
–100
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
Switching Characteristics
V
GS
(V)
0
1000
500
tf
200
100
50
td(on)
20
10
–0.1 –0.3
V
GS
= –10 V, V
DD
= –30 V
PW = 5
µs,
duty
≤
1 %
–1
–3
–10
–30
–100
tr
td(off)
0
–20
–4
Drain to Source Voltage
–40
V
DS
–60
V
GS
V
DD
= –10 V
–25 V
–50 V
–8
–12
–80
I
D
= –30 A
0
40
80
120
160
–16
–100
–20
200
Gate to Source Voltage
Switching Time t (ns)
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 8
RENESAS [ RENESAS TECHNOLOGY CORP ]
