2SJ553(L), 2SJ553(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
–60
±20
–30
–120
–30
–30
77
75
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
I
AP
Note 3
E
AR
Pch
Tch
Note 2
Note 3
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
4. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–60
±20
—
—
–1.0
—
—
15
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.028
0.038
25
2500
1300
300
25
150
350
220
–0.95
100
Max
—
—
–10
±10
–2.0
0.037
0.055
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±16
V, V
DS
= 0
I
D
= –1 mA, V
DS
= –10 V
Note 4
I
D
= –15 A, V
GS
= –10 V
I
D
= –15 A, V
GS
= –4 V
Note 4
I
D
= –15 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –10 V
I
D
= –15 A
R
L
= 2
Ω
I
F
= –30 A, V
GS
= 0
I
F
= –30 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 4
Rev.4.00 Sep 07, 2005 page 2 of 8
RENESAS [ RENESAS TECHNOLOGY CORP ]
